Group-III Nitrides Catalyzed Transformations of Organic Molecules

نویسندگان

چکیده

New means for activating covalent bonds in organic compounds are crucial further advancing application fields from pharmaceuticals to plastics syntheses. The manufacturing of almost every daily product can be impacted by the development such bond activations. However, traditional catalysts these transformations faced with challenges as catalyst stability, recyclability, or energy demand. Due their extraordinary fast carrier migration rate, and accessibility through mass nano-level crystals, III-nitrides provide potential opportunities toward solving challenges. Group-III nitrides, touted next-generation semiconductors beyond Si, have brought dramatic changes our everyday life over past 3 decades. With revolutionary applications LED lighting power electronics, use III-nitride chemical reactions has also attracted extensive interests. while inorganic reactions, water-splitting, CO2 reduction, N2 fixation, made impressive achievements, reaction received much less attention. In this review, we summarize activation molecules achieve more efficient greener reactivity. both thermal-driven photo-driven covered a wide range substrates, review could inspire innovations exploration catalysis using “the future,” at same time help bridge boundaries electronics chemistry, sparking interdisciplinary collaborations. While first industrial revolution was driven steam1Landes D.S. Unbound Prometheus: Technical Change Industrial Development Western Europe 1750 Present. Cambridge University Press, 1969Google Scholar second petroleum,2Vassiliou M.S. Historical Dictionary Petroleum Industry. Scarecrow 2009Google third one, IT revolution, inarguably backboned semiconductor silicon,3Heywang W. Zaininger K.H. Silicon: Evolution Future Technology. Springer, 2013Google until it is now ready unseated new class material4Feng III, Z.C. Nitride Materials, Devices Nano-Structures. World Scientific, 2008Google lead fourth great revolution5Schwab K. Fourth Revolution. Crown, 2017Google not so distant future. Highly anticipated future,”6Yoder M.N. Gallium nitride past, present, future.in: 1997 Proceedings IEEE/Cornell Conference on Advanced Concepts High Speed Semiconductor Circuits. Institute Electrical Electronics Engineers, 1997: 3-12Crossref Google Scholar, 7Ambacher O. Growth group III-nitrides.J. Phys. D: Appl. 1998; 31: 2653-2710Crossref Scopus (1208) 8Ferreyra R.A. Zhu C. Teke A. Morkoç H. Group III nitrides.in: Kasap S. Capper P. Springer Handbook Electronic Photonic Materials. International Publishing, 2017: 743-827Crossref (3) III-nitrides, represented boron (BN), aluminum (AlN), gallium (GaN), indium (InN), alloys, only cellphones tablets portable yet powerful9Rajan Jena D. electronics.Semicond. Sci. Technol. 2013; 28: 070301Crossref (15) but enabled highly advanced technologies military radars10Linthicum M.D. nitride-based modules set 180-day standard high operation.https://www.spacewar.com/reports/Gallium_Nitride_Based_Modules_Set_New_180_Day_Standard_For_High_Power_Operation_999.htmlDate: 2011Google space solar panels.11Lidow Witcher J.B. Smalley Enhancement mode (eGaN™) FET characteristics under long term stress.Government Microcircuit Applications Critical Technology Conference. 2011; https://epc-co.com/epc/Portals/0/epc/documents/articles/eGaN_FET_Characteristics_under_Long_Term_Stress.pdfGoogle Of interest enormous addressing critical energy, environment, climate issues 21st century,12Risti? J. Sánchez-García M.A. Calleja E. Sanchez-Páramo J.M. Jahn U. Ploog Algan nanocolumns grown molecular beam epitaxy: optical structural characterization.Phys. Stat. Sol. 2002; 192: 60-66Crossref (64) 13Stoica T. Calarco R. Doping nanowires epitaxy.IEEE Select. Topics Quantum Electron. 17: 859-868Crossref (39) 14Geelhaar L. Chèze Jenichen B. Brandt Pfüller Münch Rothemund Reitzenstein Forchel Kehagias et al.Properties GaN 878-888Crossref (94) 15Bertness K.A. Sanford N.A. Davydov A.V. 847-858Crossref (98) 16Mata Hestroffer Budagosky Cros Bougerol Renevier Daudin Nucleation plasma-assisted effect temperature.J. Cryst. Growth. 334: 177-180Crossref (42) 17Hersee S.D. Fairchild M. Rishinaramangalam A.K. Ferdous Zhang Varangis P.M. Swartzentruber B.S. Talin A.A. nanowire light emitting diodes based templated scalable growth process.Electron. Lett. 2009; 45: 75-76Crossref (76) 18Knelangen Consonni V. Trampert Riechert situanalysis strain relaxation during catalyst-free nucleation nanowires.Nanotechnology. 2010; 21: 245705Crossref PubMed (35) 19Schumann Gotschke Limbach F. Stoica Selective-area mbe patterned oxide layer.Nanotechnology. 22: 095603Crossref (73) 20Hersee Sun X. Wang controlled nanowires.Nano 2006; 6: 1808-1811Crossref (484) 21Liu Shields P.A. Chen Q. Allsopp D.W.E. W.N. Bowen C.R. Phan T.-L. Cherns Variations mechanisms selective area nano-patterned substrates Movpe.Phys. Status Solidi 7: 32-35Crossref (18) 22Choi Arita Arakawa Y. thin mocvd.J. 2012; 357: 58-61Crossref (81) offering huge market value $100 billion.17Hersee Scholar,23Zhao Woo S.Y. Bugnet Liu Kang Botton G.A. Mi Z. Three-dimensional quantum confinement charge carriers self-organized nanowires: A viable route electrically injected deep ultraviolet lasers.Nano 2015; 15: 7801-7807Crossref (45) Scholar,24Janjua Zhao Anjum D.H. Priante Alhamoud Wu Li Albadri A.M. Alyamani A.Y. al.Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires 337 nm metal/silicon substrates.Opt. Express. 2017; 25: 1381-1390Crossref (49) Moreover, introduction chemistry sparked unprecedented reactivities.25Bozack M.J. Muehlhoff Russell J.N. Choyke W.J. Yates Jr., J.T. Methods surface chemistry.J. Vac. 1987; 5: 1Crossref (178) Water-splitting,26Hisatomi Kubota Domen Recent advances photocatalytic photoelectrochemical water splitting.Chem. Soc. Rev. 2014; 43: 7520-7535Crossref reduction,27Habisreutinger S.N. Schmidt-Mende Stolarczyk J.K. Photocatalytic reduction Tio2 other semiconductors.Angew. Chem. Int. Ed. Engl. 52: 7372-7408Crossref (1608) fixation28Chen N. Kong Ong W.-J. fixation nitrogen ammonia: state-of-the-art advancements future prospects.Mater. Horiz. 2018; 9-27Crossref Scholar,29Liu Tan Cheng G. Guo C.-J. Efficient Nitrogen Fixation Catalyzed water.iScience. 2019; 208-216Abstract Full Text PDF (0) catalyzed been successfully explored adequately documented.30Liu Chowdhury F.A. Vanka Chu Emerging nanocrystals.Phys. 2020; 217: 1900885Crossref attention.31Meierhofer Krieg Voss meets organic: devices gallium-nitride/organic hybrid structures.Semicond. 33: 083001Crossref (8) distinctive catalytic properties closely related well-demonstrated electronic superiority semiconductor. Compared silicon, oxides, semiconductors, three main advantages are—wide tunable bandgap, electromigration breakdown voltage, which enable enhanced heat resistance, electrical voltage-carrying ability, respectively, giving an overall performance-per-watt (PPW) enhancement 900 times compared silicon (Figure 1).32IHI CorporationThe next generation world - expanded via high-temperature, high-pressure technology.IHI Eng. 48: 16-19Google first, wider bandgap enables overcome greater HOMO-LUMO barrier when III-nitrides,33Mehmood Malik M.I. Ul Haq Khan Hussein I.A. Harrabi Al-Ahmed Effect outdoor temperature power-conversion efficiency newly synthesized photosensitizer dye-sensitized cells.Mater. 220: 222-225Crossref (1) Scholar,34Leclerc Chávez Ibraikulov O.A. Heiser Lévêque Impact backbone fluorination ?-conjugated polymers photovoltaic devices: review.Polymers. 2016; 8: 11Crossref (110) unlocking Second, rate electron transfer between semiconductor, speeding up reaction.35Schwarz J.A. Felton L.E. Compensating effects kinetics.Solid-State 1985; 669-675Crossref Third, voltage equivalent stability catalysts, repeatedly recycled end catalysis.36Fink D.G. Fowle F.F. Knowlton A.E. Beaty H.W. Standard Engineers. McGraw-Hill, 1978Google Particularly, addition near-ideal thermodynamic kinetic attributes,37Kudo Miseki Heterogeneous photocatalyst materials 38: 253-278Crossref give extreme absorption coefficients, possess straddling broad potentials ~50% incorporation.38Moses P.G. Van de Walle C.G.V.d. Band bowing band alignment ingan alloys.Appl. 96: 021908Crossref (260) Scholar,39Chowdhury Kibria M.G. Trudeau M.L. structures hydrogen evolution visible irradiation.APL Mater. 3: 104408Crossref (28) It worth noting that tailored near-infrared UV wavelengths, covers nearly entire spectrum. Meanwhile, conduction valence engineered appropriate redox various require different driving forces. Intriguingly, nanocrystals additional advantages, including separation. recent discovery N-terminated nanocrystals, top c-plane nonpolar sidewalls protect against photo-corrosion oxidation long-term stability.40Van C.G. Segev Microscopic origins states Surfaces.J. 2007; 101: 081704Crossref (215) 41Bandi? Z.Z. Bridger Piquette E.C. McGill T.C. Minority diffusion length lifetime GaN.Appl. 72: 3166-3168Crossref (114) 42Jain S.C. Willander Narayan Overstraeten R.V. III–nitrides: growth, characterization, properties.J. 2000; 87: 965-1006Crossref (1110) 43Monemar Pozina hetero structures.Prog. 24: 239-290Crossref (95) 44Yam F.K. Hassan Ingan: overview kinetics, physical emission mechanisms.Superlattices Microstruct. 2008; 1-23Crossref 45Kibria Qiao Yang Boukahil I. Ji Himpsel F.J. al.Atomic-scale origin performance P-GaN arrays pure splitting.Adv. 8388-8397Crossref (66) 46Vanka Zeng Pham T.A. Toma F.M. Ogitsu Long-term studies photoelectrode three-electrode configuration.J. 27612-27619Crossref particularly 1-D nanostructured favor exposing high-density site. Nearly perfect single-crystal wurtzite nanowires, epitaxy, migration. defects- dislocations-free structure, together apparent ionicity mainly located near edges, protecting being non-radiative recombination sites. series previous works, function protection layer, enabling stability45Kibria reactive spontaneous dissociation polar bonds.47Shen Small Y.A. Allen P.B. Fernandez-Serra M.V. Hybertsen Muckerman (101?0)?water interface.J. 114: 13695-13704Crossref Scholar,48Chen P.-T. C.-L. Hayashi First-principles calculations due splitting surfaces.J. 18228-18232Crossref low proton diffusion.49Yang Han Roles cocatalysts photocatalysis photoelectrocatalysis.Acc. Res. 46: 1900-1909Crossref (1601) Scholar,50Shen Water adsorption (101?0) surface.J. 113: 3365-3368Crossref form surfaces significantly properties. For example, (zigzag) (armchair) BN, possesses (c-plane) (m-plane) 2).51Golberg Bando Huang Terao Mitome Tang Zhi Boron nanotubes nanosheets.ACS Nano. 4: 2979-2993Crossref (1531) order take advantage those diverse properties, industry, generally epitaxial metal-organic vapor deposition (MOCVD), epitaxy (MBE) large scale. principle, effective dislocation- defect-free foreign substrates.12Risti? Scholar,52Young S.P. Hwang B.R. Lee J.C. Hyunsik Cho H.Y. T.W. Na J.H. Park C.M. Self-assembled Al(x) Ga (1-x) N nanorods Si(001) epitaxy.Nanotechnology. 4640-4643Crossref (21) 53Bertness Roshko Barker Spontaneously nanowires.J. 287: 522-527Crossref (143) 54Zhao Connie A.T. Dastjerdi M.H.T. X.H. Djavid Sadaf X.D. Shih Aluminum diodes: breaking fundamental bottleneck sources.Sci. Rep. 8332Crossref (126) 55Thomas Santino D.C. Sarwar A.T.M. Patrick J.P. Robert Roberto Deep polarization induced al X 1- active regions.Nanotechnology. 455201Crossref (44) 56Carnevale Kent T.F. Phillips P.J. A.T.M.G. Selcu Klie R.F. Myers R.C. Mixed polarity polarization-induced P–N junction light-emitting diodes.Nano 13: 3029-3035Crossref (62) 57Pierret Murcia-Mascaros Gayral Growth, whole composition range.Nanotechnology. 115704Crossref (53) 58Pierret Hertog M.d. Kociak Structural alx Ga1–Xn nanowires.Phys. RRL. 868-873Crossref 59Wu Molecular characterization coated Si (0 0 1) substrate.J. 507: 65-69Crossref (10) capable deliberately cation-terminated controlling conditions (e.g., atmosphere). morphology into one-dimensional (nanowires nanorods) two-dimensional (monolayer, epilayers, etc.) morphologies, depending practical demands. These adjustable morphological endow coordination presenting unique support tailoring steric centers. This discusses forming compounds. As types reactivity were, best knowledge, seldom reported thallium (TlN), nihonium (NhN), will focus primarily involving AlN, GaN. Oxidative dehydrogenation (ODH) alkanes production olefin alternative pathway conventional energy-consuming steam-cracking process favorable thermodynamics prevention coke formation.60Sattler J.J. Ruiz-Martinez Santillan-Jimenez Weckhuysen B.M. Catalytic metals metal oxides.Chem. 10613-10653Crossref (701) Scholar,61Cavani Ballarini Cericola ethane propane: how far commercial implementation?.Catal. Today. 127: 113-131Crossref (681) To date, several supported vanadium, tungsten, molybdenum oxides developed ODH alkane.62Chen Bell Iglesia Kinetics mechanism oxidative propane molybdenum, tungsten oxides.J. 104: 1292-1299Crossref limitation selectivity desired because over-oxidation products.63Carrero C.A. Schloegl Wachs I.E. Schomaecker literature kinetics well-defined vanadium catalysts.ACS Catal. 3357-3380Crossref (229) 2016, Hermans’s excellent hexagonal BN (h-BN) (BNNTs) (ODHP).64Grant Carrero Goeltl Venegas Mueller Burt Specht S.E. McDermott W.P. Chieregato Hermans Selective propene catalysts.Science. 354: 1570-1573Crossref (247) ODHP comparing representative shown Figure 3. Specifically, 14% conversion 79% achieved, traditionally vanadia V/SiO2 would 61% 9% rate. major by-products ethene (12%), valuable olefin; meanwhile used, were COx (33%). BNNTs exhibited higher activity than h-BN area. showed dependence oxygen reactant second-order PC3H8, unlike V/SiO2, suggested zero-order PO2 first-order PC3H8. Together DFT spectroscopic data, radical rebound proposed 4). reaction, one molecule atoms terminated armchair edge, [>B–O–O–N<] Then, atom secondary carbon extracted site O–O bond, leads B–OH group, nitroxyl radical, propyl radical. rapidly intermediate [>N–O–CH(CH3)2]. abstracted primary adjacent followed rebound, gives di-propoxyl intermediate. Such stabilization believed prevent generating free radicals. After desorption side product, regenerated molecules.Figure 4Radical Rebound Mechanism Using MaterialsShow full captionAtom colors: B, green; N, silver.Reprinted permission al.64Grant Copyright 2016 American Association Advancement Science.View Large Image ViewerDownload Hi-res image Download (PPT) Atom silver. Reprinted Science. Besides propene, C4 olefin. 2017, co-worker extended research n-butane isobutane.65Venegas Grant Micka N-butane isobutane nitride.ChemCatChem. 9: 2118-2127Crossref (36) 76.2% 1-butene 2-butene 7.2% 75.4% isobutene 6.2% obtained isobutane, respectively 5). Furthermore, products alkene (ethene propene) rather species. abstraction alkanes, work proposed.64Grant weakest C–H cleaved adsorbed molecule. cleavage occur either carbon, suggests kinetically thermodynamically. C–C cleavage, after occur, O-bound neighboring methyl breaks transfer, results propoxyl B–O–CH3 6). compete partial pressure. Under condition, alkene.Figure 6Proposed Bond Cleavage Oxygen-Lean ConditionsShow captionReprinted al.65Venegas 2017 Wiley-VCH Verlag GmbH & Co. KGaA, WeinheimView Weinheim year, Wang’s novel porous carbon-doped (BCN) nanosheets ethylbenzene

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ژورنال

عنوان ژورنال: Chem

سال: 2021

ISSN: ['2451-9308', '2451-9294']

DOI: https://doi.org/10.1016/j.chempr.2020.09.014